ss12 ? ss110 1.0a surface mount schottky barrier diode features ! schottky barrier chip ! ideally suited for automatic assembly b ! low power loss, high efficiency ! surge overload rating to 30a peak d ! for use in low voltage application a ! guard ring die construction f ! plastic case material has ul flammability classification rating 94v-o c h g e mechanical data ! case: sma/do-214ac, molded plastic ! terminals: solder plated, solderable per mil-std-750, method 2026 ! polarity: cathode band or cathode notch ! marking: type number ! weight: 0.064 grams (approx.) ! lead free: for rohs / lead free version, add ?-lf? suffix to part number, see page 4 maximum ratings and electrical characteristics @t a =25c unless otherwise specified characteristic symbol ss12 SS13 ss14 ss15 ss16 ss18 ss19 s100 unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 20 30 40 50 60 80 90 100 v rms reverse voltage v r(rms) 14 21 28 35 42 56 64 71 v average rectified output current @t l = 75c i o 1.0 a non-repetitive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i fsm 30 a forward voltage @i f = 1.0a v fm 0.50 0.70 0.85 v peak reverse current @t a = 25c at rated dc blocking voltage @t a = 100c i rm 0.5 20 ma typical thermal resistance (note 1) r jl r ja 28 88 c/w operating temperature range t j -65 to +125 c storage temperature range t stg -65 to +150 c note: 1. mounted on p.c. board with 5.0mm 2 copper pad area. sma/do-214ac dim min max a 2.50 2.90 b 4.00 4.60 c 1.20 1.60 d 0.152 0.305 e 4.80 5.28 f 2.00 2.44 g 0.051 0.203 h 0.76 1.52 all dimensions in mm 1 of 2 ss12 ? ss110 ss12 ? s100 1 of 4 ? 2006 won-top electronics pb ss12 ? s100 1.0a surface mount schottky barrier diode features ! schottky barrier chip ! ideally suited for automatic assembly b ! low power loss, high efficiency ! surge overload rating to 30a peak d ! for use in low voltage application a ! guard ring die construction f ! plastic case material has ul flammability classification rating 94v-o c h g e mechanical data ! case: sma/do-214ac, molded plastic ! terminals: solder plated, solderable per mil-std-750, method 2026 ! polarity: cathode band or cathode notch ! marking: type number ! weight: 0.064 grams (approx.) ! lead free: for rohs / lead free version, add ?-lf? suffix to part number, see page 4 maximum ratings and electrical characteristics @t a =25c unless otherwise specified characteristic symbol ss12 SS13 ss14 ss15 ss16 ss18 ss19 s100 unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 20 30 40 50 60 80 90 100 v rms reverse voltage v r(rms) 14 21 28 35 42 56 64 71 v average rectified output current @t l = 75c i o 1.0 a non-repetitive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i fsm 30 a forward voltage @i f = 1.0a v fm 0.50 0.70 0.85 v peak reverse current @t a = 25c at rated dc blocking voltage @t a = 100c i rm 0.5 20 ma typical thermal resistance (note 1) r jl r ja 28 88 c/w operating temperature range t j -65 to +125 c storage temperature range t stg -65 to +150 c note: 1. mounted on p.c. board with 5.0mm 2 copper pad area. wte power semiconductors sma/do-214ac dim min max a 2.50 2.90 b 4.00 4.60 c 1.20 1.60 d 0.152 0.305 e 4.80 5.28 f 2.00 2.44 g 0.051 0.203 h 0.76 1.52 all dimensions in mm
0.01 0.1 1.0 10 0 0.4 0.8 1.2 i , inst a nt aneous forw ard c urrent (a) f v , instantaneous fwd voltage (v) fig. 2 typ. forward characteristics f ss12 - ss14 ss15 - ss16 t - 25oc j i pulse width = 300 s f m 10 20 30 40 0 1 10 100 i , peak forw ard surge current (a) fsm fi g . 3 max non-repetitive peak fwd sur g e current number of cycles at 60 hz single half sine-wave (jedec method) t = 150oc j 10 100 1000 0.1 1 10 100 c , junction cap acit ance (pf) j v , reverse voltage (v) fig. 4 typical junction capacitance r t = 25c f = 1 mhz j 0 20 40 60 80 100 120 140 i , inst ant aneous reverse current (ma) r percent of rated peak reverse voltage (%) fi g . 5 typical reverse characteristics t = 100oc j t = 75oc j t = 25oc j 100 10 1.0 0.1 0.01 0.001 0 0.5 1.0 25 50 75 100 125 150 i a verage for w ard current (a) (a v), t , lead temper a ture (oc) fig. 1 forward current derating curve l ss18 - s100 2 of 2 ss12 ? ss110 ss12 ? ss110 ss12 ? s100 2 of 4 ? 2006 won-top electronics 0.01 0.1 1.0 10 0 0. 4 0 .8 1. 2 i , inst a nt aneous forw ard c urrent (a) f v , instantaneous fwd voltage (v) fig. 2 typ. forward characteristics f ss 12 - ss 14 ss 15 - ss 16 t - 25oc j i pulse width = 300 s f m 10 20 30 40 0 1 10 100 i , peak forw ard surge current (a) fsm fi g . 3 max non-repetitive peak fwd sur g e current number of cycles at 60 hz single half sine-wave (jedec method) t = 150oc j 10 100 1000 0.1 1 10 100 c , junction cap acit ance (pf) j v , reverse voltage (v) fig. 4 typical junction capacitance r t = 25c f = 1 mhz j 0 20 40 60 80 100 120 140 i , inst ant aneous reverse current (ma) r percent of rated peak reverse voltage (%) fi g . 5 typical reverse characteristics t = 100oc j t = 75oc j t = 25oc j 100 10 1.0 0.1 0.01 0.001 0 0.5 1.0 25 50 75 100 125 150 i a verage for w ard current (a) (a v), t , l e ad temper a ture (oc) fig. 1 forward current derating curve l ss 1 8 - s 100
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